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BD539C |
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| Part Number | BD539C |
| Manufacturer | Power Innovations Limited |
| Description | BD539, BD539A, BD539B, BD539C, BD539D NPN SILICON POWER TRANSISTORS Copyright © 1997, Power Innovations Limited, UK JUNE 1973 - REVISED MARCH 1997 q Designed for Complementary Use with the BD540 Ser... |
| Features |
pply when the base-emitter diode is open circuited. 2. Derate linearly to 150°C case temperature at the rate of 0.36 W/°C. 3. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C. V EBO IC Ptot Ptot TA Tj Tstg TL VCEO VCBO SYMBOL VALUE 40 60 80 100 120 40 60 80 100 120 5 5 45 2 -65 to +150 -65 to +150 -65 to +150 260 V A W W °C °C °C °C V V UNIT
PRODUCT
INFORMATION
Information is current as of publication date. Products conform to specifications in accordance with the terms of Power Innovations standard warranty. Production processing does not necessarily include testing of... |
| Document |
 BD539C Data Sheet
PDF 85.53KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | BD539 |
Power Innovations Limited |
NPN SILICON POWER TRANSISTORS |
|
| 2 | BD539 |
INCHANGE |
NPN Transistor |
|
| 3 | BD539A |
Power Innovations Limited |
NPN SILICON POWER TRANSISTORS |
|
| 4 | BD539A |
INCHANGE |
NPN Transistor |
|
| 5 | BD539B |
Power Innovations Limited |
NPN SILICON POWER TRANSISTORS |
|