BCR555 - Siemens Semiconductor Group

BCR555 PNP Silicon Digital Transistor

BCR 555 PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in resistor (R1 = 2.2kΩ, R2 = 10kΩ) Type BCR 555 Marking Ordering Code XDs Q62702-C2383 Pin Configuration 1=B 2=E 3=C Package SOT-23 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Input on Volta.

Features

eakdown voltage V(BR)CBO 50 IC = 10 µA, IB = 0 Collector cutoff current ICBO 100 nA mA 0.65 70 V 0.3 1 1.4 2.9 0.24 kΩ - VCB = 40 V, IE = 0 Emitter cutoff current IEBO hFE VCEsat Vi(off) 0.4 VEB = 5 V, IC = 0 DC current gain IC = 50 mA, VCE = 5 V Collector-emitter saturation voltage 1) IC = 50 mA, IB = 2.5 mA Input off voltage IC = 100 µA, VCE = 5 V Input on Voltage Vi(on) 0.5 IC = 10 mA, VCE = 0.3 V Input resistor Resistor ratio AC Characteristics Transition frequency R1 R1/R2 fT 1.5 0.19 MHz 150 - IC = 50 mA, VCE = 5 V, f = 100 MHz 1) Pulse test: t < 300µs; D < 2% Semiconduc.