BCR553 - Siemens Semiconductor Group

BCR553 PNP Silicon Digital Transistor

BCR 553 PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1=2.2kΩ, R2=2.2kΩ) Type BCR 553 Marking Ordering Code XBs Q62702-C2371 Pin Configuration 1=B 2=E 3=C Package SOT-23 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Input on Vol.

Features

eakdown voltage V(BR)CBO 50 IC = 10 µA, IB = 0 Collector cutoff current ICBO 100 nA mA 3.5 40 V 0.3 1.5 1.8 2.9 1.1 kΩ - VCB = 40 V, IE = 0 Emitter cutoff current IEBO hFE VCEsat Vi(off) 0.6 VEB = 10 V, IC = 0 DC current gain IC = 50 mA, VCE = 5 V Collector-emitter saturation voltage 1) IC = 50 mA, IB = 2.5 mA Input off voltage IC = 100 µA, VCE = 5 V Input on Voltage Vi(on) 1 IC = 10 mA, VCE = 0.3 V Input resistor Resistor ratio AC Characteristics Transition frequency R1 R1/R2 fT 1.5 0.9 MHz 150 - IC = 50 mA, VCE = 5 V, f = 100 MHz 1) Pulse test: t < 300µs; D < 2% Semiconducto.