BCR 519 NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1=4.7kΩ) Type BCR 519 Marking Ordering Code XKs UPON INQUIRY Pin Configuration 1=B 2=E 3=C Package SOT-23 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Input on Voltage DC co.
ge V(BR)CBO 50 IC = 10 µA, IB = 0 Base-emitter breakdown voltage V(BR)EBO 5 IE = 10 µA, IC = 0 Collector cutoff current ICBO 100 nA 120 630 mV 0.3 V 0.4 0.8 1.5 6.2 kΩ VCB = 40 V, IE = 0 DC current gain hFE VCEsat Vi(off) Vi(on) 0.5 IC = 50 mA, VCE = 5 V Collector-emitter saturation voltage 1) IC = 50 mA, IB = 2.5 mA Input off voltage IC = 100 µA, VCE = 5 V Input on Voltage IC = 10 mA, VCE = 0.3 V Input resistor AC Characteristics Transition frequency R1 3.2 fT 100 - MHz IC = 50 mA, VCE = 5 V, f = 100 MHz 1) Pulse test: t < 300µs; D < 2% Semiconductor Group 2 Dec-18-1996 B.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | BCR512 |
Siemens Semiconductor Group |
NPN Silicon Digital Transistor | |
2 | BCR512 |
Infineon Technologies AG |
NPN Silicon Digital Transistor | |
3 | BCR503 |
Siemens Semiconductor Group |
NPN Silicon Digital Transistor | |
4 | BCR503 |
Infineon Technologies AG |
NPN Silicon Digital Transistor | |
5 | BCR505 |
Siemens Semiconductor Group |
NPN Silicon Digital Transistor | |
6 | BCR505 |
Infineon Technologies AG |
NPN Silicon Digital Transistor | |
7 | BCR521 |
Siemens Semiconductor Group |
NPN Silicon Digital Transistor | |
8 | BCR521 |
Infineon Technologies AG |
NPN Silicon Digital Transistor | |
9 | BCR523 |
Siemens Semiconductor Group |
NPN Silicon Digital Transistor | |
10 | BCR523 |
Infineon Technologies AG |
NPN Silicon Digital Transistor | |
11 | BCR533 |
Siemens Semiconductor Group |
NPN Silicon Digital Transistor | |
12 | BCR533 |
Infineon Technologies AG |
NPN Silicon Digital Transistor |