BCR523 - Siemens Semiconductor Group

BCR523 NPN Silicon Digital Transistor

BCR 523 NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in resistor (R1=1kΩ,R2=10kΩ) Type BCR 523 Marking Ordering Code XGs C62702-C2487 Pin Configuration 1=B 2=E 3=C Package SOT-23 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Input on Voltage DC c.

Features

e V(BR)CBO 50 IC = 10 µA, IB = 0 Collector cutoff current ICBO 100 nA mA 0.72 70 V 0.3 1 1.4 1.3 0.11 kΩ - VCB = 40 V, IE = 0 Emitter cutoff current IEBO hFE VCEsat Vi(off) 0.3 VEB = 5 V, IC = 0 DC current gain IC = 50 mA, VCE = 5 V Collector-emitter saturation voltage 1) IC = 50 mA, IB = 2.5 mA Input off voltage IC = 100 µA, VCE = 5 V Input on Voltage Vi(on) 0.4 IC = 10 mA, VCE = 0.3 V Input resistor Resistor ratio AC Characteristics Transition frequency R1 R1/R2 fT 0.7 0.09 MHz 100 - IC = 50 mA, VCE = 5 V, f = 100 MHz 1) Pulse test: t < 300µs; D < 2% Semiconductor Group 2 .