BCR116W - Siemens Semiconductor Group

BCR116W NPN Silicon Digital Transistor (Switching circuit/ inverter/ interface circuit/ driver circuit)

BCR 116W NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1=4.7kΩ, R2=47kΩ) Type BCR 116W Marking Ordering Code WGs UPON INQUIRY Pin Configuration 1=B 2=E 3=C Package SOT-323 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Input on V.

Features

ase breakdown voltage V(BR)CBO 50 IC = 10 µA, IB = 0 Collector cutoff current ICBO 100 nA µA 155 70 V 0.3 0.8 1.4 6.2 0.11 kΩ - VCB = 40 V, IE = 0 Emitter cutoff current IEBO hFE VCEsat Vi(off) 0.4 VEB = 5 V, IC = 0 DC current gain IC = 5 mA, VCE = 5 V Collector-emitter saturation voltage 1) IC = 10 mA, IB = 0.5 mA Input off voltage IC = 100 µA, VCE = 5 V Input on Voltage Vi(on) 0.5 IC = 2 mA, VCE = 0.3 V Input resistor Resistor ratio R1 R1/R2 3.2 0.09 AC Characteristics Transition frequency fT 160 3 - MHz pF - IC = 10 mA, VCE = 5 V, f = 100 MHz Collector-base capacitance Cc.