BCR116W |
Part Number | BCR116W |
Manufacturer | Siemens Semiconductor Group |
Description | BCR 116W NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1=4.7kΩ, R2=47kΩ) Type BCR 116W Marking Ordering Code WGs UPON INQ... |
Features |
ase breakdown voltage
V(BR)CBO
50
IC = 10 µA, IB = 0
Collector cutoff current
ICBO
100
nA µA 155 70 V 0.3 0.8 1.4 6.2 0.11 kΩ -
VCB = 40 V, IE = 0
Emitter cutoff current
IEBO hFE VCEsat Vi(off)
0.4
VEB = 5 V, IC = 0
DC current gain
IC = 5 mA, VCE = 5 V
Collector-emitter saturation voltage 1)
IC = 10 mA, IB = 0.5 mA
Input off voltage
IC = 100 µA, VCE = 5 V
Input on Voltage
Vi(on)
0.5
IC = 2 mA, VCE = 0.3 V
Input resistor Resistor ratio
R1 R1/R2
3.2 0.09
AC Characteristics Transition frequency
fT
160 3 -
MHz pF -
IC = 10 mA, VCE = 5 V, f = 100 MHz
Collector-base capacitance
Cc... |
Document |
BCR116W Data Sheet
PDF 34.74KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | BCR116 |
Siemens Semiconductor Group |
NPN Silicon Digital Transistor (Switching circuit/ inverter/ interface circuit/ driver circuit) | |
2 | BCR116 |
Infineon Technologies AG |
NPN Silicon Digital Transistor | |
3 | BCR116F |
Infineon Technologies AG |
NPN Silicon Digital Transistor | |
4 | BCR116L3 |
Infineon Technologies AG |
NPN Silicon Digital Transistor | |
5 | BCR116S |
Infineon Technologies AG |
NPN Silicon Digital Transistor |