BCR112U - Infineon Technologies AG

BCR112U NPN Silicon Digital Transistor

BCR112... NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1=4.7kΩ, R2=4.7kΩ) • For 6-PIN packages: two (galvanic) internal isolated transistors with good matching in one package BCR112/F/L3 BCR112T/W C 3 BCR112U C1 6 B2 5 E2 4 R1 R1 R2 TR2 R1 R2 TR1 R2 1 B 2 E EHA07184 1 E1.

Features

meter Junction - soldering point 1) BCR112 BCR112F BCR112L3 BCR112T BCR112U BCR112W 1For calculation of R thJA please refer to Application Note Thermal Resistance Symbol VCEO VCBO VEBO Vi(on) IC Ptot Value 50 50 10 15 100 200 250 250 250 250 250 150 -65 ... 150 Value ≤ 240 ≤ 90 ≤ 60 ≤ 165 ≤ 133 ≤ 105 Unit V mA mW Tj Tstg Symbol RthJS °C Unit K/W 2 Aug-29-2003 BCR112... Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. DC Characteristics Collector-emitter breakdown voltage V(BR)CEO 50 V IC = 100 µA, IB = 0 Collector-base b.