BCR116S - Infineon Technologies AG

BCR116S NPN Silicon Digital Transistor

BCR116.../SEMH13 NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1=4.7kΩ, R2=47kΩ) • For 6-PIN packages: two (galvanic) internal isolated transistors with good matching in one package BCR116/F/L3 BCR116T/W C 3 BCR116S SEMH13 C1 6 B2 5 E2 4 R1 R1 R2 TR2 R1 R2 TR1 R2 1 B 2 E EHA0.

Features

R116S, T S ≤ 115°C BCR116T, TS ≤ 109°C BCR116W, TS ≤ 124°C SEMH13, TS ≤ 75°C Junction temperature Storage temperature Thermal Resistance Parameter Junction - soldering point1) 50 50 5 15 100 200 250 250 250 250 250 250 V mA mW Tj T stg Symbol RthJS 150 -65 ... 150 Value ≤ 240 ≤ 90 ≤ 60 ≤ 140 ≤ 165 ≤ 105 ≤ 300 °C Unit K/W BCR116 BCR116F BCR116L3 BCR116S BCR116T BCR116W SEMH13 1For calculation of R thJA please refer to Application Note Thermal Resistance 2 May-17-2004 BCR116.../SEMH13 Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values min. typ..