BCR112W - Siemens Semiconductor Group

BCR112W NPN Silicon Digital Transistor (Switching circuit/ inverter/ inferface circuit/ driver circuit)

BCR 112W NPN Silicon Digital Transistor • Switching circuit, inverter, inferface circuit, driver circuit • Built in bias resistor (R1=4.7kΩ, R2=4.7kΩ) Type BCR 112W Marking Ordering Code WFs Q62702-C2284 Pin Configuration 1=B 2=E 3=C Package SOT-323 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Input on .

Features

ase breakdown voltage V(BR)CBO 50 IC = 10 µA, IB = 0 Collector cutoff current ICBO 100 nA mA 1.61 20 V 0.3 1.5 2.5 6.2 1.1 kΩ - VCB = 40 V, IE = 0 Emitter cutoff current IEBO hFE VCEsat Vi(off) 0.8 VEB = 10 V, IC = 0 DC current gain IC = 5 mA, VCE = 5 V Collector-emitter saturation voltage 1) IC = 10 mA, IB = 0.5 mA Input off voltage IC = 100 µA, VCE = 5 V Input on Voltage Vi(on) 1 IC = 2 mA, VCE = 0.3 V Input resistor Resistor ratio R1 R1/R2 3.2 0.9 AC Characteristics Transition frequency fT 140 3 - MHz pF - IC = 10 mA, VCE = 5 V, f = 100 MHz Collector-base capacitance Ccb .