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BCR112W |
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| Part Number | BCR112W |
| Manufacturer | Siemens Semiconductor Group |
| Description | BCR 112W NPN Silicon Digital Transistor • Switching circuit, inverter, inferface circuit, driver circuit • Built in bias resistor (R1=4.7kΩ, R2=4.7kΩ) Type BCR 112W Marking Ordering Code WFs Q62702-... |
| Features |
ase breakdown voltage
V(BR)CBO
50
IC = 10 µA, IB = 0
Collector cutoff current
ICBO
100
nA mA 1.61 20 V 0.3 1.5 2.5 6.2 1.1 kΩ -
VCB = 40 V, IE = 0
Emitter cutoff current
IEBO hFE VCEsat Vi(off)
0.8
VEB = 10 V, IC = 0
DC current gain
IC = 5 mA, VCE = 5 V
Collector-emitter saturation voltage 1)
IC = 10 mA, IB = 0.5 mA
Input off voltage
IC = 100 µA, VCE = 5 V
Input on Voltage
Vi(on)
1
IC = 2 mA, VCE = 0.3 V
Input resistor Resistor ratio
R1 R1/R2
3.2 0.9
AC Characteristics Transition frequency
fT
140 3 -
MHz pF -
IC = 10 mA, VCE = 5 V, f = 100 MHz
Collector-base capacitance
Ccb
... |
| Document |
 BCR112W Data Sheet
PDF 34.91KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | BCR112 |
Siemens Semiconductor Group |
NPN Silicon Digital Transistor (Switching circuit/ inverter/ inferface circuit/ driver circuit) |
|
| 2 | BCR112 |
Infineon Technologies AG |
NPN Silicon Digital Transistor |
|
| 3 | BCR112F |
Infineon Technologies AG |
NPN Silicon Digital Transistor |
|
| 4 | BCR112L3 |
Infineon Technologies AG |
NPN Silicon Digital Transistor |
|
| 5 | BCR112T |
Infineon Technologies AG |
NPN Silicon Digital Transistor |
|