BCR114 - Infineon Technologies AG

BCR114 NPN Silicon Digital Transistor

BCR114... NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1 =4.7kΩ, R2 =10kΩ) BCR114/F BCR114L3/T C 3 R1 R2 1 B 2 E EHA07184 Type BCR114 BCR114F BCR114L3 BCR114T Marking U4s U4s U4 U4s 1=B 1=B 1=B 1=B 2=E 2=E 2=E 2=E Pin Configuration 3=C 3=C 3=C 3=C - Package SOT23 TSFP-3 TSL.

Features

°C Unit K/W 2 Aug-29-2003 BCR114... Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. DC Characteristics Collector-emitter breakdown voltage V(BR)CEO 50 V IC = 100 µA, IB = 0 Collector-base breakdown voltage IC = 10 µA, IE = 0 V(BR)CBO I CBO I EBO h FE VCEsat Vi(off) Vi(on) R1 R1/R 2 50 30 0.5 0.5 3.2 0.42 - 4.7 0.47 160 3 100 520 0.3 1.1 1.4 6.2 0.52 kΩ Collector-base cutoff current VCB = 40 V, IE = 0 nA µA V Emitter-base cutoff current VEB = 5 V, IC = 0 DC current gain1) IC = 5 mA, VCE = 5 V Collector-emitter satura.