The BB159 is a variable capacitance diode, fabricated in planar technology, and encapsulated in the SOD323 very small plastic SMD package. The matched type, BB149 has the same specification. ELECTRICAL CHARACTERISTICS Tj = 25 °C; unless otherwise specified. SYMBOL IR rs Cd PARAMETER reverse current diode series resistance diode capacitance capacitance ratio .
• Excellent linearity
• Very small plastic SMD package
• C28: 2.1 pF; ratio 9
• Low series resistance.
MAM130
BB159
handbook, 4 columns
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APPLICATIONS
• Electronic tuning in UHF television tuners
• VCO. DESCRIPTION The BB159 is a variable capacitance diode, fabricated in planar technology, and encapsulated in the SOD323 very small plastic SMD package. The matched type, BB149 has the same specification. ELECTRICAL CHARACTERISTICS Tj = 25 °C; unless otherwise specified. SYMBOL IR rs Cd PARAMETER reverse current diode series resistance diode capacitance capacitance ratio
Marking code: PJ. .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | BB151 |
Philipss |
Low-voltage variable capacitance diode | |
2 | BB152 |
Philipss |
VHF variable capacitance diode | |
3 | BB153 |
Philipss |
VHF variable capacitance diode | |
4 | BB154 |
Philipss |
UHF variable capacitance diode | |
5 | BB155 |
Philipss |
Low-voltage variable capacitance diode | |
6 | BB156 |
Kexin |
Low-Voltage Variable Capacitance Diode | |
7 | BB156 |
NXP |
Low-voltage variable capacitance diode | |
8 | BB158 |
Philipss |
VHF variable capacitance diode | |
9 | BB101C |
Hitachi |
Build in Biasing Circuit MOS FET IC UHF RF Amplifier | |
10 | BB101M |
Hitachi |
Build in Biasing Circuit MOS FET IC UHF RF Amplifier | |
11 | BB102C |
Hitachi |
Build in Biasing Circuit MOS FET IC UHF RF Amplifier | |
12 | BB102M |
Hitachi |
Build in Biasing Circuit MOS FET IC UHF RF Amplifier |