The BB158 is variable capacitance diode, fabricated in planar technology, and encapsulated in the SOD323 very small plastic SMD package. The matched type, BB148 has the same specification. ELECTRICAL CHARACTERISTICS Tj = 25 °C; unless otherwise specified. SYMBOL IR rs Cd PARAMETER reverse current diode series resistance diode capacitance capacitance ratio Ma.
• Excellent linearity
• Very small plastic SMD package
• C28: 2.6 pF; ratio: 15
• Low series resistance.
MAM130
BB158
handbook, 4 columns
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APPLICATIONS
• Electronic tuning in VHF television tuners, band B up to 460 MHz
• VCO. DESCRIPTION The BB158 is variable capacitance diode, fabricated in planar technology, and encapsulated in the SOD323 very small plastic SMD package. The matched type, BB148 has the same specification. ELECTRICAL CHARACTERISTICS Tj = 25 °C; unless otherwise specified. SYMBOL IR rs Cd PARAMETER reverse current diode series resistance diode capacitance capacitance rat.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | BB151 |
Philipss |
Low-voltage variable capacitance diode | |
2 | BB152 |
Philipss |
VHF variable capacitance diode | |
3 | BB153 |
Philipss |
VHF variable capacitance diode | |
4 | BB154 |
Philipss |
UHF variable capacitance diode | |
5 | BB155 |
Philipss |
Low-voltage variable capacitance diode | |
6 | BB156 |
Kexin |
Low-Voltage Variable Capacitance Diode | |
7 | BB156 |
NXP |
Low-voltage variable capacitance diode | |
8 | BB159 |
Philipss |
UHF variable capacitance diode | |
9 | BB101C |
Hitachi |
Build in Biasing Circuit MOS FET IC UHF RF Amplifier | |
10 | BB101M |
Hitachi |
Build in Biasing Circuit MOS FET IC UHF RF Amplifier | |
11 | BB102C |
Hitachi |
Build in Biasing Circuit MOS FET IC UHF RF Amplifier | |
12 | BB102M |
Hitachi |
Build in Biasing Circuit MOS FET IC UHF RF Amplifier |