k 1 a 2 APPLICATIONS • Voltage controlled oscillators (VCO). MAM130 DESCRIPTION The BB151 is a variable capacitance diode, fabricated in planar technology, and encapsulated in the SOD323 very small plastic SMD package. Marking code: PA. Cathode side indicated by a bar. Fig.1 Simplified outline (SOD323) and symbol. LIMITING VALUES In accordance with th.
• Very low capacitance spread
• Excellent linearity
• Very small plastic SMD package
• C3: 10.6 pF; ratio: 1.53
• Very low series resistance.
4 columns
BB151
PINNING PIN 1 2 cathode anode DESCRIPTION
k 1
a 2
APPLICATIONS
• Voltage controlled oscillators (VCO).
MAM130
DESCRIPTION The BB151 is a variable capacitance diode, fabricated in planar technology, and encapsulated in the SOD323 very small plastic SMD package.
Marking code: PA. Cathode side indicated by a bar.
Fig.1 Simplified outline (SOD323) and symbol.
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | BB152 |
Philipss |
VHF variable capacitance diode | |
2 | BB153 |
Philipss |
VHF variable capacitance diode | |
3 | BB154 |
Philipss |
UHF variable capacitance diode | |
4 | BB155 |
Philipss |
Low-voltage variable capacitance diode | |
5 | BB156 |
Kexin |
Low-Voltage Variable Capacitance Diode | |
6 | BB156 |
NXP |
Low-voltage variable capacitance diode | |
7 | BB158 |
Philipss |
VHF variable capacitance diode | |
8 | BB159 |
Philipss |
UHF variable capacitance diode | |
9 | BB101C |
Hitachi |
Build in Biasing Circuit MOS FET IC UHF RF Amplifier | |
10 | BB101M |
Hitachi |
Build in Biasing Circuit MOS FET IC UHF RF Amplifier | |
11 | BB102C |
Hitachi |
Build in Biasing Circuit MOS FET IC UHF RF Amplifier | |
12 | BB102M |
Hitachi |
Build in Biasing Circuit MOS FET IC UHF RF Amplifier |