BB101M - Hitachi

BB101M Build in Biasing Circuit MOS FET IC UHF RF Amplifier

BB101M Build in Biasing Circuit MOS FET IC UHF RF Amplifier ADE-208-504 1st. Edition Features • Build in Biasing Circuit; To reduce using parts cost & PC board space. • Low noise characteristics; (NF = 2.0 dB typ. at f = 900 MHz) • Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 200 V at C = 200 pF, Rs = 0 conditions. Outline MPAK-4 2 .

Features

• Build in Biasing Circuit; To reduce using parts cost & PC board space.
• Low noise characteristics; (NF = 2.0 dB typ. at f = 900 MHz)
• Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 200 V at C = 200 pF, Rs = 0 conditions. Outline MPAK-4 2 3 1 4 1. Source 2. Gate1 3. Gate2 4. Drain BB101M Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate 1 to source voltage Gate 2 to source voltage Drain current Channel power dissipation Channel temperature Storage temperature Symbol VDS VG1S VG2S ID Pch Tch Tstg Ratings 6 +6
  –0 ±6 25 150 150
  –55 to +150 Unit V V.