MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BAW56LT1/D Monolithic Dual Switching Diode Common Anode ANODE 3 CATHODE 1 2 CATHODE BAW56LT1 Motorola Preferred Device 3 1 MAXIMUM RATINGS (EACH DIODE) Rating Reverse Voltage Forward Current Peak Forward Surge Current Symbol VR IF IFM(surge) Value 70 200 500 Unit Vdc mAdc mAdc 2 CASE 318 – .
µAdc) Reverse Voltage Leakage Current (VR = 25 Vdc, TJ = 150°C) (VR = 70 Vdc) (VR = 70 Vdc, TJ = 150°C) Diode Capacitance (VR = 0, f = 1.0 MHz) Forward Voltage (IF = 1.0 mAdc) (IF = 10 mAdc) (IF = 50 mAdc) (IF = 150 mAdc) Reverse Recovery Time (IF = IR = 10 mAdc, IR(REC) = 1.0 mAdc) (Figure 1) RL = 100 Ω 1. FR
– 5 = 1.0 0.75 2. Alumina = 0.4 0.3 V(BR) IR — — — CD VF — — — — trr — 715 855 1000 1250 6.0 ns — 30 2.5 50 2.0 pF mVdc 70 — Vdc µAdc
0.062 in. 0.024 in. 99.5% alumina.
Thermal Clad is a trademark of the Bergquist Company
Preferred devices are Motorola recommended choices for f.
www.DataSheet4U.com BAW56LT1 Preferred Device Dual Switching Diode Common Anode Features • Pb−Free Packages are Avail.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | BAW56LT1G |
ON Semiconductor |
Dual Switching Diode Common Anode | |
2 | BAW56LT3 |
ON Semiconductor |
(BAW56LT1 / BAW56LT3) Monolithic Dual Switching Diode Common Anode | |
3 | BAW56LT3G |
ON Semiconductor |
Dual Switching Diode Common Anode | |
4 | BAW56L |
ON Semiconductor |
Dual Switching Diode Common Anode | |
5 | BAW56 |
TAITRON |
Three Terminals SMD Switching Diode | |
6 | BAW56 |
Multicomp |
Diodes | |
7 | BAW56 |
GME |
Surface mount switching diode | |
8 | BAW56 |
WON-TOP |
SURFACE MOUNT FAST SWITCHING DIODE | |
9 | BAW56 |
LITE-ON |
SURFACE MOUNT FAST SWITCHING DIODE | |
10 | BAW56 |
Vishay Telefunken |
Dual Surface Mount Switching Diode | |
11 | BAW56 |
Fairchild |
High Conductance Ultra Fast Diode | |
12 | BAW56 |
Diodes Incorporated |
DUAL SURFACE MOUNT SWITCHING DIODE |