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BAW56LT1G - ON Semiconductor

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BAW56LT1G Dual Switching Diode Common Anode

BAW56LT1G, SBAW56LT1G, BAW56LT3G, SBAW56LT3G Dual Switching Diode Common Anode Features • AEC−Q101 Qualified and PPAP Capable • S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant* MAXIMUM RATINGS (EACH DIODE) Rating Symbol Value U.

Features


• AEC−Q101 Qualified and PPAP Capable
• S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant
* MAXIMUM RATINGS (EACH DIODE) Rating Symbol Value Unit Reverse Voltage Forward Current Peak Forward Surge Current Non−Repetitive Peak Forward Current t = 1 ms (Note 3) VR IF IFM(surge) IFSM 70 200 500 4 V mA mA A THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation FR− 5 Board PD 225 mW (Note 1) TA = 25°C Derate above 25°C 1.8 mW/°C Therm.

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