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BAW56LT1 |
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| Part Number | BAW56LT1 |
| Manufacturer | ON |
| Description | www.DataSheet4U.com BAW56LT1 Preferred Device Dual Switching Diode Common Anode Features • Pb−Free Packages are Available MAXIMUM RATINGS (EACH DIODE) Rating Reverse Voltage Forward Current Peak Fo... |
| Features |
• Pb−Free Packages are Available MAXIMUM RATINGS (EACH DIODE) Rating Reverse Voltage Forward Current Peak Forward Surge Current Non−Repetitive Peak Forward Current t = 1 ms (Note 3) Symbol VR IF IFM(surge) IFSM 4 A Value 70 200 500 Unit V mA mA ANODE 3 http://onsemi.com CATHODE 1 2 CATHODE THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR− 5 Board (Note 1) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Total Device Dissipation Alumina Substrate, (Note 2) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Junction and Storage Temperatur... |
| Document |
 BAW56LT1 Data Sheet
PDF 78.82KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | BAW56LT1 |
Motorola |
Monolithic Dual Switching Diode Common Anode |
|
| 2 | BAW56LT1 |
Leshan Radio Company |
Monolithic Dual Switching Diode Common Anode |
|
| 3 | BAW56LT1G |
ON Semiconductor |
Dual Switching Diode Common Anode |
|
| 4 | BAW56LT3 |
ON Semiconductor |
(BAW56LT1 / BAW56LT3) Monolithic Dual Switching Diode Common Anode |
|
| 5 | BAW56LT3G |
ON Semiconductor |
Dual Switching Diode Common Anode |
|