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BAW56LT1 |
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| Part Number | BAW56LT1 |
| Manufacturer | Motorola |
| Description | MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BAW56LT1/D Monolithic Dual Switching Diode Common Anode ANODE 3 CATHODE 1 2 CATHODE BAW56LT1 Motorola Preferred Device 3 1 MAXIMUM RA... |
| Features |
µAdc) Reverse Voltage Leakage Current (VR = 25 Vdc, TJ = 150°C) (VR = 70 Vdc) (VR = 70 Vdc, TJ = 150°C) Diode Capacitance (VR = 0, f = 1.0 MHz) Forward Voltage (IF = 1.0 mAdc) (IF = 10 mAdc) (IF = 50 mAdc) (IF = 150 mAdc) Reverse Recovery Time (IF = IR = 10 mAdc, IR(REC) = 1.0 mAdc) (Figure 1) RL = 100 Ω 1. FR – 5 = 1.0 0.75 2. Alumina = 0.4 0.3 V(BR) IR — — — CD VF — — — — trr — 715 855 1000 1250 6.0 ns — 30 2.5 50 2.0 pF mVdc 70 — Vdc µAdc 0.062 in. 0.024 in. 99.5% alumina. Thermal Clad is a trademark of the Bergquist Company Preferred devices are Motorola recommended choices for f... |
| Document |
 BAW56LT1 Data Sheet
PDF 82.32KB |
| Distributor | Stock | Price | Buy |
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| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | BAW56LT1 |
ON |
Monolithic Dual Switching Diode Common Anode |
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| 2 | BAW56LT1 |
Leshan Radio Company |
Monolithic Dual Switching Diode Common Anode |
|
| 3 | BAW56LT1G |
ON Semiconductor |
Dual Switching Diode Common Anode |
|
| 4 | BAW56LT3 |
ON Semiconductor |
(BAW56LT1 / BAW56LT3) Monolithic Dual Switching Diode Common Anode |
|
| 5 | BAW56LT3G |
ON Semiconductor |
Dual Switching Diode Common Anode |
|