B1399 - Hitachi Semiconductor

B1399 Silicon PNP Transistor

2SB1399 Silicon PNP Triple Diffused Application Low frequency power amplifier Outline TO-220FM 123 1. Base 2. Collector 3. Emitter 2 1 ID 1.0 kΩ (Typ) 200 Ω (Typ) 3 2SB1399 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power .

Features

ge VCE (sat)2 — — Base to emitter saturation VBE (sat)1 — — voltage VBE (sat)2 — — C to E diode forward voltage VD — — Note: 1. Pulse Test. See switching characteristic curve of 2SB955(K). Max Unit — V — V — V
  –10 µA
  –10 20000
  –1.5 V
  –3.0
  –2.0 V
  –3.5 3.0 V Test Conditions IC =
  –0.1 mA, IE = 0 IC =
  –25 mA, RBE = ∞ IE =
  –50 mA, IC = 0 VCB =
  –100 V, IE = 0 VCE =
  –100 V, RBE = ∞ VCE =
  –3 V, IC =
  –5 A
*1 IC =
  –5 A, IB = 10 mA
*1 IC =
  –10 A, IB =
  –100 mA
*1 IC =
  –5 A, IB = 10 mA
*1 IC =
  –10 A, IB =
  –100 mA
*1 ID = 10 A
*1 2 Collector power dissipation Pc (W) Maximum Collector D.