B1393 - Panasonic Semiconductor

B1393 2SB1393

Power Transistors 2SB1393, 2SB1393A Silicon PNP epitaxial planar type For power amplification Complementary to 2SD1985 and 2SD1985A s Features q Satisfactory linearity of foward current transfer ratio hFE q Low collector to emitter saturation voltage VCE(sat) q Full-pack package which can be installed to the heat sink with one screw s Absolute Maximum R.

Features

q Satisfactory linearity of foward current transfer ratio hFE q Low collector to emitter saturation voltage VCE(sat) q Full-pack package which can be installed to the heat sink with one screw s Absolute Maximum Ratings (TC=25˚C) Parameter Symbol Ratings Unit Collector to 2SB1393 base voltage 2SB1393A VCBO
  –60
  –80 V Collector to 2SB1393 emitter voltage 2SB1393A VCEO
  –60
  –80 V Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C VEBO ICP IC PC
  –5
  –5
  –3 25 2.0 V A A W Junction temperature Storage temperature Tj 150 ˚C.