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B1399 |
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| Part Number | B1399 |
| Manufacturer | Hitachi Semiconductor |
| Description | 2SB1399 Silicon PNP Triple Diffused Application Low frequency power amplifier Outline TO-220FM 123 1. Base 2. Collector 3. Emitter 2 1 ID 1.0 kΩ (Typ) 200 Ω (Typ) 3 2SB1399 Absolute Maximum Ra... |
| Features |
ge
VCE (sat)2
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—
Base to emitter saturation
VBE (sat)1
—
—
voltage
VBE (sat)2
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—
C to E diode forward voltage VD
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—
Note: 1. Pulse Test.
See switching characteristic curve of 2SB955(K).
Max Unit
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V
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V
—
V
–10 µA –10 20000 –1.5 V –3.0 –2.0 V –3.5 3.0 V Test Conditions IC = –0.1 mA, IE = 0 IC = –25 mA, RBE = ∞ IE = –50 mA, IC = 0 VCB = –100 V, IE = 0 VCE = –100 V, RBE = ∞ VCE = –3 V, IC = –5 A*1 IC = –5 A, IB = 10 mA*1 IC = –10 A, IB = –100 mA*1 IC = –5 A, IB = 10 mA*1 IC = –10 A, IB = –100 mA*1 ID = 10 A*1 2 Collector power dissipation Pc (W) Maximum Collector D... |
| Document |
 B1399 Data Sheet
PDF 36.60KB |
| Distributor | Stock | Price | Buy |
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