B1391 - Hitachi Semiconductor

B1391 2SB1391

2SB1391 Silicon PNP Triple Diffused Application Power switching Outline TO-220FM 123 1. Base 2. Collector 3. Emitter 2 1 2 kΩ (Typ) 200 Ω (Typ) 3 2SB1391 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction.

Features

— — — — — — Max Unit —V —V —V
  –10 µA
  –10 20000
  –1.5 V
  –3.0
  –2.0 V
  –3.5 Test conditions IC =
  –0.1 mA, IE = 0 IC =
  –25 mA, RBE = ∞ IE =
  –50 mA, IC = 0 VCB =
  –100 V, IE = 0 VCE =
  –100 V, RBE = ∞ VCE =
  –3 V, IC =
  –4 A
*1 IC =
  –4 A, IB =
  –8 mA
*1 IC =
  –8 A, IB =
  –80 mA
*1 IC =
  –4 A, IB =
  –8 mA
*1 IC =
  –8 A, IB =
  –80 mA
*1 See switching characteristic curve of 2SB791(K). 2 Collector power dissipation Pc (W) Maximum Collector Dissipation Curve 30 20 10 0 50 100 150 Case Temperature TC (°C) Typical Output Characteristics
  –10 TC = 25°C
  –8
  –6 = 25 W PC
  –5.0
  –4.5
  –4.0
  –3.5
  –3.0
  –2.5
  –1.5
  –2.0
  –1..