Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. These revolutionary Power MOSFETs associate a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. They are therefore suitable for the most demanding high-efficiency converters. Product status l.
Order codes
VDSS (@ TJmax)
RDS(on) max.
STB11NM60T4 STP11NM60
650 V
0.45 Ω
• 100% avalanche tested
• Low input capacitance and gate charge
• Low gate input resistance
ID 11 A
Package
D²PAK TO-220
Applications
• Switching applications
Description
These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. These revolutionary Power MOSFETs associate a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. They are therefore suitable for the most demanding high-efficiency converters.
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|---|---|---|---|---|
| 1 | B11NM60N |
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| 3 | B11NK50Z |
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| 6 | B1100 |
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| 7 | B1100B |
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| 12 | B1100Q |
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