These N-channel Power MOSFETs are developed using STMicroelectronics' revolutionary MDmesh™ technology, which associates the multiple drain process with the company's PowerMESH™ horizontal layout. These devices offer extremely low on-resistance, high dv/dt and excellent avalanche characteristics. Utilizing ST's proprietary strip technique, these Power MOSFET.
Order codes VDSS
RDS(on) max
RDS(on)
*Qg
ID
STB11NM80 STF11NM80 STI11NM80 800 V STP11NM80 STW11NM80
< 0.40 Ω
14Ω
*nC
11 A
■ Low input capacitance and gate charge
■ Low gate input resistance
■ Best RDS(on)
*Qg in the industry
Applications
■ Switching applications
Description
These N-channel Power MOSFETs are developed using STMicroelectronics' revolutionary MDmesh™ technology, which associates the multiple drain process with the company's PowerMESH™ horizontal layout. These devices offer extremely low on-resistance, high dv/dt and excellent avalanche characteristics. Utilizing ST's prop.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | B11NM60 |
STMicroelectronics |
N-CHANNEL Power MOSFET | |
2 | B11NM60N |
STMicroelectronics |
N-CHANNEL Power MOSFET | |
3 | B11NK50Z |
STMicroelectronics |
N-CHANNEL Power MOSFET | |
4 | B110 |
Ferranti |
Low Voltage X-Ray Tube | |
5 | B1100 |
Diodes Incorporated |
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER | |
6 | B1100 |
CTC |
SCHOTTKY BARRIER RECTIFIERS | |
7 | B1100B |
Diodes Incorporated |
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER | |
8 | B1100BQ |
Diodes |
1.0A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER | |
9 | B1100CALRP |
Littelfuse |
SIDACtor Protection Thyristors | |
10 | B1100CCLRP |
Littelfuse |
SIDACtor Protection Thyristors | |
11 | B1100LB |
Diodes Incorporated |
1.0A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER | |
12 | B1100Q |
Diodes |
1.0A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER |