The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. 3 2 1 TO-220 3 1 D2PAK 3 2 1 TO-220FP Figure 1. Internal schematic diagram Tabl.
Type
STB11NK50Z STP11NK50ZFP
STP11NK50Z
VDSS
500 V 500 V 500 V
RDS(on) max
ID
Pw
< 0.52 Ω 10 A 125 W < 0.52 Ω 10 A 30 W < 0.52 Ω 10 A 125 W
■ Extremely high dv/dt capability
■ 100% avalanche tested
■ Gate charge minimized
■ Very low intrinsic capacitances
Application
■ Switching applications
Description
The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications.
3 2 1
TO-.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | B11NM60 |
STMicroelectronics |
N-CHANNEL Power MOSFET | |
2 | B11NM60N |
STMicroelectronics |
N-CHANNEL Power MOSFET | |
3 | B11NM80 |
STMicroelectronics |
N-CHANNEL Power MOSFET | |
4 | B110 |
Ferranti |
Low Voltage X-Ray Tube | |
5 | B1100 |
Diodes Incorporated |
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER | |
6 | B1100 |
CTC |
SCHOTTKY BARRIER RECTIFIERS | |
7 | B1100B |
Diodes Incorporated |
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER | |
8 | B1100BQ |
Diodes |
1.0A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER | |
9 | B1100CALRP |
Littelfuse |
SIDACtor Protection Thyristors | |
10 | B1100CCLRP |
Littelfuse |
SIDACtor Protection Thyristors | |
11 | B1100LB |
Diodes Incorporated |
1.0A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER | |
12 | B1100Q |
Diodes |
1.0A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER |