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B11NM60 |
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| Part Number | B11NM60 |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. These revolutionary Power MOSFETs associate a vertical structure to the company’s strip layout to... |
| Features |
Order codes
VDSS (@ TJmax)
RDS(on) max.
STB11NM60T4 STP11NM60
650 V
0.45 Ω
• 100% avalanche tested • Low input capacitance and gate charge • Low gate input resistance ID 11 A Package D²PAK TO-220 Applications • Switching applications Description These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. These revolutionary Power MOSFETs associate a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. They are therefore suitable for the most demanding high-efficiency converters. ... |
| Document |
 B11NM60 Data Sheet
PDF 592.59KB |
| Distributor | Stock | Price | Buy |
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