Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low onresistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design.
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Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified
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HEXFET® Power MOSFET
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AUIRLZ44Z
G S
V(BR)DSS 55V RDS(on) typ. 11mΩ max. 13.5mΩ ID 51A
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Description
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low onresistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repet.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | AUIRLZ24NL |
International Rectifier |
Power MOSFET | |
2 | AUIRLZ24NS |
International Rectifier |
Power MOSFET | |
3 | AUIRL1404L |
Infineon |
Power MOSFET | |
4 | AUIRL1404L |
International Rectifier |
Power MOSFET | |
5 | AUIRL1404S |
Infineon |
Power MOSFET | |
6 | AUIRL1404S |
International Rectifier |
Power MOSFET | |
7 | AUIRL1404Z |
Infineon |
Power MOSFET | |
8 | AUIRL1404Z |
International Rectifier |
Power MOSFETs | |
9 | AUIRL1404ZL |
Infineon |
Power MOSFET | |
10 | AUIRL1404ZL |
International Rectifier |
Power MOSFETs | |
11 | AUIRL1404ZS |
Infineon |
Power MOSFET | |
12 | AUIRL1404ZS |
International Rectifier |
Power MOSFETs |