AUIRL1404ZL - International Rectifier

AUIRL1404ZL Power MOSFETs

Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest D DD processing techniques to achieve extremely low onresistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make thi.

Features

l Logic Level l Advanced Process Technology l Ultra Low On-Resistance AUIRL1404ZL HEXFET® Power MOSFET D V(BR)DSS 40V l 175°C Operating Temperature RDS(on) typ. 2.5mΩ l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free, RoHS Compliant G max. 3.1mΩ lÃID (Silicon Limited) 180A l Automotive Qualified
* S ID (Package Limited) 160A Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest D DD processing techniques to achieve extremely low onresistance per silicon area. Additional features of this design are a 175°.