Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this desig.
l Advanced Process Technology l Logic Level Gate Drive l 175°C Operating Temperature l Fast Switching
l Repetitive Avalanche Allowed up to Tjmax l Lead-Free, RoHS Compliant
l Automotive Qualified
*
Description
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and r.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | AUIRLZ24NL |
International Rectifier |
Power MOSFET | |
2 | AUIRLZ44Z |
International Rectifier |
Power MOSFET | |
3 | AUIRL1404L |
Infineon |
Power MOSFET | |
4 | AUIRL1404L |
International Rectifier |
Power MOSFET | |
5 | AUIRL1404S |
Infineon |
Power MOSFET | |
6 | AUIRL1404S |
International Rectifier |
Power MOSFET | |
7 | AUIRL1404Z |
Infineon |
Power MOSFET | |
8 | AUIRL1404Z |
International Rectifier |
Power MOSFETs | |
9 | AUIRL1404ZL |
Infineon |
Power MOSFET | |
10 | AUIRL1404ZL |
International Rectifier |
Power MOSFETs | |
11 | AUIRL1404ZS |
Infineon |
Power MOSFET | |
12 | AUIRL1404ZS |
International Rectifier |
Power MOSFETs |