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AUIRL1404S - International Rectifier

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AUIRL1404S Power MOSFET

Specifically designed for Automotive applications, this Stripe Planar design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely ef.

Features

l Advanced Planar Technology l Logic-Level Gate Drive l Low On-Resistance l Dynamic dV/dT Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Repetitive Avalanche Allowed up to Tjmax l Lead-Free, RoHS Compliant l Automotive Qualified
* D G S PD - 96385A AUIRL1404S AUIRL1404L HEXFET® Power MOSFET V(BR)DSS 40V RDS(on) max. ID 4mΩ h160A Description Specifically designed for Automotive applications, this Stripe Planar design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined wit.

The same part from a different manufacturer

Datasheet AUIRL1404S - Infineon AUIRL1404S

Specifically designed for Automotive applications, this Stripe Planar design of HEXFET® Power MOSFETs utilizes the lates.

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