Specifically designed for Automotive applications, this Stripe Planar design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely ef.
l Advanced Planar Technology l Logic-Level Gate Drive l Low On-Resistance l Dynamic dV/dT Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Repetitive Avalanche Allowed up to Tjmax
l Lead-Free, RoHS Compliant
l Automotive Qualified
*
D
G S
PD - 96385A
AUIRL1404S AUIRL1404L
HEXFET® Power MOSFET
V(BR)DSS
40V
RDS(on) max. ID
4mΩ
h160A
Description
Specifically designed for Automotive applications, this Stripe Planar design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined wit.
Specifically designed for Automotive applications, this Stripe Planar design of HEXFET® Power MOSFETs utilizes the lates.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | AUIRL1404L |
Infineon |
Power MOSFET | |
2 | AUIRL1404L |
International Rectifier |
Power MOSFET | |
3 | AUIRL1404Z |
Infineon |
Power MOSFET | |
4 | AUIRL1404Z |
International Rectifier |
Power MOSFETs | |
5 | AUIRL1404ZL |
Infineon |
Power MOSFET | |
6 | AUIRL1404ZL |
International Rectifier |
Power MOSFETs | |
7 | AUIRL1404ZS |
Infineon |
Power MOSFET | |
8 | AUIRL1404ZS |
International Rectifier |
Power MOSFETs | |
9 | AUIRL3705Z |
Infineon |
Power MOSFET | |
10 | AUIRL3705Z |
International Rectifier |
Power MOSFET | |
11 | AUIRL3705ZL |
Infineon |
Power MOSFET | |
12 | AUIRL3705ZL |
International Rectifier |
Power MOSFET |