Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficie.
l Advanced Planar Technology l Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Repetitive Avalanche Allowed up to
Tjmax l Lead-Free, RoHS Compliant l Automotive Qualified
*
G
AUIRF3415
HEXFET® Power MOSFET
D V(BR)DSS
150V
RDS(on) max. 0.042Ω
S ID
43A
D
Description
Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | AUIRF3004WL |
International Rectifier |
Power MOSFET | |
2 | AUIRF3007 |
International Rectifier |
Power MOSFET | |
3 | AUIRF3205 |
International Rectifier |
Power MOSFET | |
4 | AUIRF3205Z |
Infineon |
Power MOSFET | |
5 | AUIRF3205Z |
International Rectifier |
HEXFET Power MOSFET | |
6 | AUIRF3205ZS |
Infineon |
Power MOSFET | |
7 | AUIRF3205ZS |
International Rectifier |
HEXFET Power MOSFET | |
8 | AUIRF3305 |
International Rectifier |
Power MOSFET | |
9 | AUIRF3305 |
Infineon |
Power MOSFET | |
10 | AUIRF3315S |
Infineon |
Power MOSFET | |
11 | AUIRF3315S |
International Rectifier |
Power MOSFET | |
12 | AUIRF3504 |
International Rectifier |
Power MOSFET |