Specifically design for automotive applications this Widelead TO262 package part has the advantage of having over 50% lower lead resistance and delivering over 20% lower Rds(on) when compared with a traditional TO-262 package housing the same silicon die. This greatly helps in reducing condition losses, achieving higher current levels or enabling a system to.
l Advanced Process Technology l Ultra Low On-Resistance l 50% Lower Lead Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free, RoHS Compliant l Automotive Qualified
*
AUIRF3004WL
HEXFET® Power MOSFET
D
V(BR)DSS
40V
RDS(on) typ.
1.27mΩ
max.
1.40mΩ
G
ID (Silicon Limited)
386A c
S
ID (Package Limited)
240A
Description
Specifically design for automotive applications this Widelead TO262 package part has the advantage of having over 50% lower lead resistance and delivering over 20% lower Rds(on) when compared with a traditio.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | AUIRF3007 |
International Rectifier |
Power MOSFET | |
2 | AUIRF3205 |
International Rectifier |
Power MOSFET | |
3 | AUIRF3205Z |
Infineon |
Power MOSFET | |
4 | AUIRF3205Z |
International Rectifier |
HEXFET Power MOSFET | |
5 | AUIRF3205ZS |
Infineon |
Power MOSFET | |
6 | AUIRF3205ZS |
International Rectifier |
HEXFET Power MOSFET | |
7 | AUIRF3305 |
International Rectifier |
Power MOSFET | |
8 | AUIRF3305 |
Infineon |
Power MOSFET | |
9 | AUIRF3315S |
Infineon |
Power MOSFET | |
10 | AUIRF3315S |
International Rectifier |
Power MOSFET | |
11 | AUIRF3415 |
International Rectifier |
Power MOSFET | |
12 | AUIRF3504 |
International Rectifier |
Power MOSFET |