AUIRF3205Z - International Rectifier

AUIRF3205Z HEXFET Power MOSFET

Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low onresistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design.

Features

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● AUIRF3205Z AUIRF3205ZS HEXFET® Power MOSFET D
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● Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified
* V(BR)DSS RDS(on) max. ID (Silicon Limited) 55V 6.5mΩ 110A 75A G S ID (Package Limited) D Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low onresistance per silicon area. Additional features of this design are a 175°C junction operating tempe.