Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low onresistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design.
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AUIRF3205Z AUIRF3205ZS
HEXFET® Power MOSFET
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Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified
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V(BR)DSS RDS(on) max. ID (Silicon Limited)
55V 6.5mΩ 110A 75A
G S
ID (Package Limited)
D
Description
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low onresistance per silicon area. Additional features of this design are a 175°C junction operating tempe.
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques t.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | AUIRF3205Z |
Infineon |
Power MOSFET | |
2 | AUIRF3205Z |
International Rectifier |
HEXFET Power MOSFET | |
3 | AUIRF3205 |
International Rectifier |
Power MOSFET | |
4 | AUIRF3004WL |
International Rectifier |
Power MOSFET | |
5 | AUIRF3007 |
International Rectifier |
Power MOSFET | |
6 | AUIRF3305 |
International Rectifier |
Power MOSFET | |
7 | AUIRF3305 |
Infineon |
Power MOSFET | |
8 | AUIRF3315S |
Infineon |
Power MOSFET | |
9 | AUIRF3315S |
International Rectifier |
Power MOSFET | |
10 | AUIRF3415 |
International Rectifier |
Power MOSFET | |
11 | AUIRF3504 |
International Rectifier |
Power MOSFET | |
12 | AUIRF3710S |
International Rectifier |
Power MOSFET |