Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this desig.
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dV/dT Rating
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified
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Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design .
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | AUIRF1324 |
International Rectifier |
Power MOSFET | |
2 | AUIRF1324S |
Infineon |
Power MOSFET | |
3 | AUIRF1324S |
International Rectifier |
Power MOSFET | |
4 | AUIRF1324S-7P |
International Rectifier |
Power MOSFET | |
5 | AUIRF1324WL |
International Rectifier |
Power MOSFET | |
6 | AUIRF1010EZ |
Infineon |
Power MOSFET | |
7 | AUIRF1010EZ |
International Rectifier |
Power MOSFET | |
8 | AUIRF1010EZL |
Infineon |
Power MOSFET | |
9 | AUIRF1010EZL |
International Rectifier |
Power MOSFET | |
10 | AUIRF1010EZS |
Infineon |
Power MOSFET | |
11 | AUIRF1010EZS |
International Rectifier |
Power MOSFET | |
12 | AUIRF1010Z |
International Rectifier |
Power MOSFET |