www.DataSheet4U.com Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combin.
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Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified
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HEXFET® Power MOSFET
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AUIRF1010EZ AUIRF1010EZS AUIRF1010EZL
60V 8.5mΩ 84A 75A
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V(BR)DSS RDS(on) max. ID (Silicon Limited)
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ID (Package Limited)
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Description www.DataSheet4U.com Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design .
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques t.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | AUIRF1010EZL |
Infineon |
Power MOSFET | |
2 | AUIRF1010EZL |
International Rectifier |
Power MOSFET | |
3 | AUIRF1010EZS |
Infineon |
Power MOSFET | |
4 | AUIRF1010EZS |
International Rectifier |
Power MOSFET | |
5 | AUIRF1010Z |
International Rectifier |
Power MOSFET | |
6 | AUIRF1010Z |
Infineon |
Power MOSFET | |
7 | AUIRF1010ZL |
International Rectifier |
Power MOSFET | |
8 | AUIRF1010ZL |
Infineon |
Power MOSFET | |
9 | AUIRF1010ZS |
International Rectifier |
Power MOSFET | |
10 | AUIRF1010ZS |
Infineon |
Power MOSFET | |
11 | AUIRF1324 |
International Rectifier |
Power MOSFET | |
12 | AUIRF1324L |
Infineon |
Power MOSFET |