AUIRF1010EZS - International Rectifier

AUIRF1010EZS Power MOSFET

www.DataSheet4U.com Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combin.

Features

O O O O O O O Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified
* HEXFET® Power MOSFET D AUIRF1010EZ AUIRF1010EZS AUIRF1010EZL 60V 8.5mΩ 84A 75A D V(BR)DSS RDS(on) max. ID (Silicon Limited) G S ID (Package Limited) D Description www.DataSheet4U.com Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design .