AUIRF1324 - International Rectifier

AUIRF1324 Power MOSFET

S D G TO-220AB AUIRF1324 D S Gate Drain Source Absolute Maximum Ratings Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to abso.

Features

l l l l l l l AUIRF1324 VDSS RDS(on) typ. max. ID (Silicon Limited) ID (Package Limited) 24V 1.2m: 1.5m: 353A 195A HEXFET® Power MOSFET Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified
* D G S c Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve www.DataSheet4U.com extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating te.