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AS4C32M16SM - Alliance Semiconductor

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AS4C32M16SM 512M (32M x 16) bit Synchronous DRAM

AS4C32M16SM 512M (32M x 16) bit Synchronous DRAM (SDRAM) Confidential Preliminary (Rev. 1.0, July /2014) Revision History AS4C32M16SM Revision Details Rev 1.0 Preliminary datasheet Date July 2014 Confidential 1|P a g e Rev1.0, July 2014 AS4C32M16SM Confidential 512M (32M x 16) bit Synchronous DRAM (SDRAM) Preliminary (Rev. 1.0, July /2014) Featur.

Features


 PC133-compliant
 Configurations
  – 32 Meg x 16 (8 Meg x 16 x 4 banks)
 Fully synchronous; all signals registered on positive edge of system clock
 Internal, pipelined operation; column address can be changed every clock cycle
 Internal banks for hiding row access/precharge
 Programmable burst lengths: 1, 2, 4, 8, or full page
 Auto precharge, includes concurrent auto precharge and auto refresh modes
 Self refresh mode
 Auto refresh
  –64ms, 8192-cycle refresh (commercial and industrial)
 LVTTL-compatible inputs and outputs
 Single 3.3V ±0.3V power supply
 Operating temperature range o.

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