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Revision History 512M SDRAM 54/86pin TSOP II Package Revision Details Rev 1.0 Preliminary datasheet AS4C16M32SC-7TIN AS4C32M16SC-7TIN AS4C64M8SC-7TIN Date Sep. 2018 Alliance Memory Inc. 511 Taylor Way, San Carlos, CA 94070 TEL: (650) 610-6800 FAX: (650) 620-9211 Alliance Memory Inc. reserves the right to change products or specification without notice Con.
• Fully Synchronous to Positive Clock Edge
• Fast clock rate: 133 MHz
• Multiple Burst Read with Single Write Operation
• Four Banks controlled by BA0 & BA1
• Data Mask for Byte Control (x16,x32)
• Programmable Mode registers
- CAS Latency: 1 or 2 or 3 - Burst Length: 1, 2, 4, 8, or full page - Burst Type: Sequential or Interleaved
• Automatic and Controlled Precharge Command
• Auto.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | AS4C32M16SA |
Alliance Semiconductor |
512Mbit Single-Data-Rate (SDR) SDRAM |
|
| 2 | AS4C32M16SB-6TIN |
Alliance Semiconductor |
CMOS synchronous 512Mb SDRAM |
|
| 3 | AS4C32M16SB-7TCN |
Alliance Semiconductor |
CMOS synchronous 512Mb SDRAM |
|
| 4 | AS4C32M16SB-7TIN |
Alliance Semiconductor |
CMOS synchronous 512Mb SDRAM |
|
| 5 | AS4C32M16SM |
Alliance Semiconductor |
512M (32M x 16) bit Synchronous DRAM |
|
| 6 | AS4C32M16D1 |
Alliance Semiconductor |
32M x 16 bit DDR Synchronous DRAM |
|
| 7 | AS4C32M16D1A-C |
Alliance Semiconductor |
32M x 16 bit DDR Synchronous DRAM |
|
| 8 | AS4C32M16D1A-I |
Alliance Semiconductor |
32M x 16 bit DDR Synchronous DRAM |
|
| 9 | AS4C32M16D2 |
Alliance Semiconductor |
512M (32M x 16 bit) DDRII Synchronous DRAM |
|
| 10 | AS4C32M16D2A-25BAN |
Alliance Semiconductor |
32M x 16 bit DDR2 Synchronous DRAM |
|
| 11 | AS4C32M16D2A-25BCN |
Alliance Semiconductor |
32M x 16 bit DDR2 Synchronous DRAM |
|
| 12 | AS4C32M16D2A-25BIN |
Alliance Semiconductor |
32M x 16 bit DDR2 Synchronous DRAM |
|