AS4C32M16SB-7TIN CMOS synchronous 512Mb SDRAM Datasheet

AS4C32M16SB-7TIN CMOS synchronous 512Mb SDRAM

AS4C32M16SB-6TIN AS4C32M16SB-7TIN AS4C32M16SB-7TCN Revision History AS4C32M16SB-7TCN/AS4C32M16SB-7TIN/AS4C32M16SB-6TIN- 54pin TSOPII PACKAGE Revision Details Rev 1.0 Preliminary datasheet Date Jun 2016 Alliance Memory Inc. 511 Taylor Way, San Carlos, CA 94070 TEL: (650) 610-6800 FAX: (650) 620-9211 Alliance Memory Inc. reserves the right to change produc.

Features

• Fast access time from clock: 5/5.4 ns
• Fast clock rate: 166/143 MHz
• Fully synchronous operation
• Internal pipelined architecture
• 8M word x 16-bit x 4-bank
• Programmable Mode registers - CAS Latency: 2 or 3 - Burst Length: 1, 2, 4, 8, or full page - Burst Type: Sequential or Interleaved - Burst stop function
• Auto Refresh and Self Refresh
• 8192 refresh cycles/64ms
• CKE power down mode
• Single +3.3V ±0.3V power supply
• Operating Temperature Range: - Commercial:.

No.	Partie #	Fabricant	Description
1	AS4C32M16SB-7TCN	Alliance Semiconductor	CMOS synchronous 512Mb SDRAM
2	AS4C32M16SB-6TIN	Alliance Semiconductor	CMOS synchronous 512Mb SDRAM
3	AS4C32M16SA	Alliance Semiconductor	512Mbit Single-Data-Rate (SDR) SDRAM
4	AS4C32M16SC-7TIN	Alliance Semiconductor	512M SDRAM
5	AS4C32M16SM	Alliance Semiconductor	512M (32M x 16) bit Synchronous DRAM
6	AS4C32M16D1	Alliance Semiconductor	32M x 16 bit DDR Synchronous DRAM
7	AS4C32M16D1A-C	Alliance Semiconductor	32M x 16 bit DDR Synchronous DRAM
8	AS4C32M16D1A-I	Alliance Semiconductor	32M x 16 bit DDR Synchronous DRAM
9	AS4C32M16D2	Alliance Semiconductor	512M (32M x 16 bit) DDRII Synchronous DRAM
10	AS4C32M16D2A-25BAN	Alliance Semiconductor	32M x 16 bit DDR2 Synchronous DRAM
11	AS4C32M16D2A-25BCN	Alliance Semiconductor	32M x 16 bit DDR2 Synchronous DRAM
12	AS4C32M16D2A-25BIN	Alliance Semiconductor	32M x 16 bit DDR2 Synchronous DRAM

AS4C32M16SB-7TIN - Alliance Semiconductor

AS4C32M16SB-7TIN CMOS synchronous 512Mb SDRAM

Features

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