APTLGT400A608G Phase leg Intelligent Power Module VCES = 600V IC = 400A @ Tc = 80°C Application • Motor control • Uninterruptible Power Supplies • Switched Mode Power Supplies • Amplifier Features • Non Punch Through (NPT) FAST IGBT - Low voltage drop - Low tail current - Soft recovery parallel diodes - Low diode VF - Low leakage current - RBSOA & SCSOA rate.
• Non Punch Through (NPT) FAST IGBT - Low voltage drop - Low tail current - Soft recovery parallel diodes - Low diode VF - Low leakage current - RBSOA & SCSOA rated
• Integrated Fail Safe IGBT Protection (Driver) - Top Bottom input signals Interlock - Isolated DC/DC Converter
• Low stray inductance
• M5 power connectors
• High level of integration
VBUS 0/VBUS OUT
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These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com
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1-6
APTLGT400A608G
– Rev 0 February, 2.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | APTLGT300A1208G |
Microsemi Corporation |
Phase leg Intelligent Power Module | |
2 | APTLGF300A1208G |
Microsemi Corporation |
Phase leg Intelligent Power Module | |
3 | APTLGF350A608G |
Microsemi Corporation |
Phase leg Intelligent Power Module | |
4 | APTLGL325A1208G |
Microsemi Corporation |
Phase leg Intelligent Power Module | |
5 | APTL3216SYCK01 |
Kingbright |
SMD LED | |
6 | APTL3216ZGC |
Kingbright Corporation |
SMD LED | |
7 | APT05DC120HJ |
Microsemi |
SiC Diode Full Bridge Power Module | |
8 | APT06DC60HJ |
Microsemi |
SiC Diode Full Bridge Power Module | |
9 | APT1001R1AVR |
Advanced Power Technology |
MOSFET | |
10 | APT1001R1BN |
Advanced Power Technology |
MOSFET | |
11 | APT1001R1BVFR |
Advanced Power Technology |
MOSFET | |
12 | APT1001R1HVR |
Advanced Power Technology |
MOSFET |