z The Green source color devices are made with InGaN on Sapphire Light Emitting Diode. z Electrostatic discharge and power surge could damage the LEDs. z It is recommended to use a wrist band or antielectrostatic glove when handling the LEDs. z All devices, equipments and machineries must be electrically grounded. Notes: 1. All dimensions are in millimeter.
z 3.2mmx1.6mm SMD LED, 1.1mm thickness. z Low power consumption. z Ideal for backlight and indicator. z Package : 2000pcs / reel. z Moisture sensitivity level : level 3. z RoHS compliant. Package Dimensions 3.2x1.6mm SMD CHIP LED LAMP Part Number: APTL3216ZGC Green Descriptions z The Green source color devices are made with InGaN on Sapphire Light Emitting Diode. z Electrostatic discharge and power surge could damage the LEDs. z It is recommended to use a wrist band or antielectrostatic glove when handling the LEDs. z All devices, equipments and machineries must be electrically grounded. .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | APTL3216SYCK01 |
Kingbright |
SMD LED | |
2 | APTLGF300A1208G |
Microsemi Corporation |
Phase leg Intelligent Power Module | |
3 | APTLGF350A608G |
Microsemi Corporation |
Phase leg Intelligent Power Module | |
4 | APTLGL325A1208G |
Microsemi Corporation |
Phase leg Intelligent Power Module | |
5 | APTLGT300A1208G |
Microsemi Corporation |
Phase leg Intelligent Power Module | |
6 | APTLGT400A608G |
Microsemi Corporation |
Phase leg Intelligent Power Module | |
7 | APT05DC120HJ |
Microsemi |
SiC Diode Full Bridge Power Module | |
8 | APT06DC60HJ |
Microsemi |
SiC Diode Full Bridge Power Module | |
9 | APT1001R1AVR |
Advanced Power Technology |
MOSFET | |
10 | APT1001R1BN |
Advanced Power Technology |
MOSFET | |
11 | APT1001R1BVFR |
Advanced Power Technology |
MOSFET | |
12 | APT1001R1HVR |
Advanced Power Technology |
MOSFET |