APT05DC120HJ ISOTOP® SiC Diode Full Bridge Power Module VRRM = 1200V IC = 5A @ Tc = 100°C Application • • • • Switch mode power supplies rectifier Induction heating Welding equipment High speed rectifiers Features • SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature Independent switching behavior - Positive temperature coeffici.
• SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature Independent switching behavior - Positive temperature coefficient on VF ISOTOP® Package (SOT-227) Very low stray inductance High level of integration
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Benefits
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• Outstanding performance at high frequency operation Low losses Low noise switching Direct mounting to heatsink (isolated package) Low junction to case thermal resistance RoHS Compliant
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Absolute maximum ratings
Symbol VR VRRM IF(AV) IFSM Parameter Maximum DC reverse Voltage Maximum Peak Repetitive Re.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | APT06DC60HJ |
Microsemi |
SiC Diode Full Bridge Power Module | |
2 | APT1001R1AVR |
Advanced Power Technology |
MOSFET | |
3 | APT1001R1BN |
Advanced Power Technology |
MOSFET | |
4 | APT1001R1BVFR |
Advanced Power Technology |
MOSFET | |
5 | APT1001R1HVR |
Advanced Power Technology |
MOSFET | |
6 | APT1001R3BN |
Advanced Power Technology |
MOSFET | |
7 | APT1001R6BFLL |
Advanced Power Technology |
POWER MOS 7 R FREDFET | |
8 | APT1001R6BN |
Advanced Power Technology |
MOSFET | |
9 | APT1001R6SFLL |
Advanced Power Technology |
POWER MOS 7 R FREDFET | |
10 | APT1001RBLC |
Advanced Power Technology |
MOSFET | |
11 | APT1001RBN |
Advanced Power Technology |
MOSFET | |
12 | APT1001RBVR |
Advanced Power Technology |
MOSFET |