APTLGT300A1208G Phase leg Intelligent Power Module VCES = 1200V IC = 300A @ Tc = 80°C Application • Motor control • Uninterruptible Power Supplies • Switched Mode Power Supplies • Amplifier Features • Trench + Field Stop IGBT 3 Technology - Low voltage drop - Low tail current - Soft recovery parallel diodes - Low diode VF - Low leakage current - RBSOA and SC.
• Trench + Field Stop IGBT 3 Technology - Low voltage drop - Low tail current - Soft recovery parallel diodes - Low diode VF - Low leakage current - RBSOA and SCSOA rated
• Integrated Fail Safe IGBT Protection (Driver) - Top Bottom input signals Interlock - Isolated DC/DC Converter
• Low stray inductance
• M5 power connectors
• High level of integration Benefits
• Outstanding performance at high frequency operation
• Stable temperature behavior
• Very rugged
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Very high noise immunity (common mode reject.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | APTLGT400A608G |
Microsemi Corporation |
Phase leg Intelligent Power Module | |
2 | APTLGF300A1208G |
Microsemi Corporation |
Phase leg Intelligent Power Module | |
3 | APTLGF350A608G |
Microsemi Corporation |
Phase leg Intelligent Power Module | |
4 | APTLGL325A1208G |
Microsemi Corporation |
Phase leg Intelligent Power Module | |
5 | APTL3216SYCK01 |
Kingbright |
SMD LED | |
6 | APTL3216ZGC |
Kingbright Corporation |
SMD LED | |
7 | APT05DC120HJ |
Microsemi |
SiC Diode Full Bridge Power Module | |
8 | APT06DC60HJ |
Microsemi |
SiC Diode Full Bridge Power Module | |
9 | APT1001R1AVR |
Advanced Power Technology |
MOSFET | |
10 | APT1001R1BN |
Advanced Power Technology |
MOSFET | |
11 | APT1001R1BVFR |
Advanced Power Technology |
MOSFET | |
12 | APT1001R1HVR |
Advanced Power Technology |
MOSFET |