The Super Bright Yellow devices is made with DH InGaAlP (on GaAs substrate) light emitting diode chip. Package Dimensions www.DataSheet4U.com Notes: 1. All dimensions are in millimeters (inches). 2. Tolerance is ±0.1(0.004") unless otherwise noted. 3. Specifications are subject to change without notice. SPEC NO: DSAD1120 APPROVED: J. Lu REV NO: V.2 CHECK.
2.0mmx1.25mm SMT LED, 0.75mm THICKNESS. LOW POWER CONSUMPTION. WIDE VIEWING ANGLE. IDEAL FOR BACK LIGHT AND INDICATOR. VARIOUS COLORS AND LENS TYPES AVAILABLE. PACKAGE : 2000PCS / REEL. Description The Super Bright Yellow devices is made with DH InGaAlP (on GaAs substrate) light emitting diode chip. Package Dimensions www.DataSheet4U.com Notes: 1. All dimensions are in millimeters (inches). 2. Tolerance is ±0.1(0.004") unless otherwise noted. 3. Specifications are subject to change without notice. SPEC NO: DSAD1120 APPROVED: J. Lu REV NO: V.2 CHECKED: Allen Liu DATE: FEB/28/2005 DRAWN: W.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | APTK2012SEC |
Kingbright Corporation |
SMD CHIP LED LAMP | |
2 | APTK2012SURC |
Kingbright Corporation |
SMD CHIP LED LAMP | |
3 | APTK2012CGCK-F01 |
Kingbright Corporation |
SMD CHIP LED LAMP | |
4 | APTK2012MBC |
Kingbright Corporation |
SMD CHIP LED LAMP | |
5 | APTK2012MGC |
Kingbright Corporation |
SMD CHIP LED LAMP | |
6 | APTK2012MGCK |
Kingbright Corporation |
SMD CHIP LED LAMP | |
7 | APTK2012TGC |
Kingbright Corporation |
SMD CHIP LED LAMP | |
8 | APT05DC120HJ |
Microsemi |
SiC Diode Full Bridge Power Module | |
9 | APT06DC60HJ |
Microsemi |
SiC Diode Full Bridge Power Module | |
10 | APT1001R1AVR |
Advanced Power Technology |
MOSFET | |
11 | APT1001R1BN |
Advanced Power Technology |
MOSFET | |
12 | APT1001R1BVFR |
Advanced Power Technology |
MOSFET |