The Super Bright Orange source color devices are made with DH InGaAlP on GaAs substrate Light Emitting Diode. POWER CONSUMPTION. VIEWING ANGLE. FOR BACKLIGHT AND INDICATOR. COLORS AND LENS TYPES AVAILABLE. : 2000PCS / REEL. !WIDE ! IDEAL ! VARIOUS !PACKAGE Package Dimensions www.DataSheet4U.com Notes: 1. All dimensions are in millimeters (inches). 2. T.
!2.0mmX1.25mm SMT LED, 0.75mm THICKNESS. !LOW Description The Super Bright Orange source color devices are made with DH InGaAlP on GaAs substrate Light Emitting Diode. POWER CONSUMPTION. VIEWING ANGLE. FOR BACKLIGHT AND INDICATOR. COLORS AND LENS TYPES AVAILABLE. : 2000PCS / REEL. !WIDE ! IDEAL ! VARIOUS !PACKAGE Package Dimensions www.DataSheet4U.com Notes: 1. All dimensions are in millimeters (inches). 2. Tolerance is ±0.1(0.004") unless otherwise noted. 3. Specifications are subject to change without notice. SPEC NO: DSAD1047 APPROVED : J. Lu REV NO: V.1 CHECKED :Allen Liu DATE:MA.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | APTK2012SURC |
Kingbright Corporation |
SMD CHIP LED LAMP | |
2 | APTK2012SYC |
Kingbright Corporation |
SMD CHIP LED LAMP | |
3 | APTK2012CGCK-F01 |
Kingbright Corporation |
SMD CHIP LED LAMP | |
4 | APTK2012MBC |
Kingbright Corporation |
SMD CHIP LED LAMP | |
5 | APTK2012MGC |
Kingbright Corporation |
SMD CHIP LED LAMP | |
6 | APTK2012MGCK |
Kingbright Corporation |
SMD CHIP LED LAMP | |
7 | APTK2012TGC |
Kingbright Corporation |
SMD CHIP LED LAMP | |
8 | APT05DC120HJ |
Microsemi |
SiC Diode Full Bridge Power Module | |
9 | APT06DC60HJ |
Microsemi |
SiC Diode Full Bridge Power Module | |
10 | APT1001R1AVR |
Advanced Power Technology |
MOSFET | |
11 | APT1001R1BN |
Advanced Power Technology |
MOSFET | |
12 | APT1001R1BVFR |
Advanced Power Technology |
MOSFET |