The Blue source color devices are made with GaN on SiC Light Emitting Diode. Static electricity and surge damage the LEDS. It is recommended to use a wrist band or antielectrostatic glove when handling the LEDs. All devices, equipment and machinery must be electrically grounded. POWER CONSUMPTION. VIEWING ANGLE. FOR BACKLIGHT AND INDICATOR. COLORS AND LENS .
!2.0mmX1.25mm SMT LED, 0.75mm THICKNESS. !LOW Description The Blue source color devices are made with GaN on SiC Light Emitting Diode. Static electricity and surge damage the LEDS. It is recommended to use a wrist band or antielectrostatic glove when handling the LEDs. All devices, equipment and machinery must be electrically grounded. POWER CONSUMPTION. VIEWING ANGLE. FOR BACKLIGHT AND INDICATOR. COLORS AND LENS TYPES AVAILABLE. : 2000PCS / REEL. ! WIDE ! IDEAL ! VARIOUS !PACKAGE Package Dimensions www.DataSheet4U.com Notes: 1. All dimensions are in millimeters (inches). 2. Tolerance i.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | APTK2012MGC |
Kingbright Corporation |
SMD CHIP LED LAMP | |
2 | APTK2012MGCK |
Kingbright Corporation |
SMD CHIP LED LAMP | |
3 | APTK2012CGCK-F01 |
Kingbright Corporation |
SMD CHIP LED LAMP | |
4 | APTK2012SEC |
Kingbright Corporation |
SMD CHIP LED LAMP | |
5 | APTK2012SURC |
Kingbright Corporation |
SMD CHIP LED LAMP | |
6 | APTK2012SYC |
Kingbright Corporation |
SMD CHIP LED LAMP | |
7 | APTK2012TGC |
Kingbright Corporation |
SMD CHIP LED LAMP | |
8 | APT05DC120HJ |
Microsemi |
SiC Diode Full Bridge Power Module | |
9 | APT06DC60HJ |
Microsemi |
SiC Diode Full Bridge Power Module | |
10 | APT1001R1AVR |
Advanced Power Technology |
MOSFET | |
11 | APT1001R1BN |
Advanced Power Technology |
MOSFET | |
12 | APT1001R1BVFR |
Advanced Power Technology |
MOSFET |